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參數(shù)資料
| 型號(hào)： | CY7C006AV-20AC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| 中文描述： | 16K X 8 DUAL-PORT SRAM, 20 ns, PQFP64 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-64 |
| 文件頁(yè)數(shù)： | 8/20頁(yè) |
| 文件大?。?/td> | 301K |
| 代理商： | CY7C006AV-20AC |
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CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 8 of 20
Data Retention Mode
The CY7C0138AV/144AV/006AV/007AV and CY7C139AV/
145AV/016AV/017AV are designed with battery backup in
mind. Data retention voltage and supply current are guaran-
teed over temperature. The following rules ensure data reten-
tion:
1. Chip enable (CE) must be held HIGH during data retention, with-
in V
CC
to V
CC
–
0.2V.
2. CE must be kept between V
CC
–
0.2V and 70% of V
CC
during the power-up and power-down transitions.
3. The RAM can begin operation >t
RC
after V
CC
reaches the
minimum operating voltage (3.0 volts).
Notes:
22. t
is a calculated parameter and is the greater of t
–
t
(actual) or t
–
t
(actual).
23.
CE = V
CC
, V
in
= GND to V
CC
, T
A
= 25
°
C. This parameter is guaranteed but not tested.
t
WB
t
WH
t
BDD[22]
INTERRUPT TIMING
[21]
t
INS
t
INR
SEMAPHORE TIMING
t
SOP
t
SWRD
t
SPS
t
SAA
R/W HIGH after BUSY (Slave)
R/W HIGH after BUSY HIGH (Slave)
BUSY HIGH to Data Valid
0
0
17
ns
ns
ns
15
20
25
INT Set Time
INT Reset Time
20
20
20
20
ns
ns
SEM Flag Update Pulse (OE or SEM)
SEM Flag Write to Read Time
SEM Flag Contention Window
SEM Address Access Time
10
5
5
12
5
5
ns
ns
ns
ns
20
25
Switching Characteristics
Over the Operating Range
[15]
(continued)
Parameter
Description
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
-20
Min.
Max.
Unit
-25
Min.
Max.
Timing
Parameter
Test Conditions
[23]
Max.
Unit
ICC
DR1
@ VCC
DR
= 2V
50
μ
A
Data Retention Mode
3.0V
3.0V
V
CC
>
2.0V
V
CC
to V
CC
–
0.2V
V
CC
CE
t
RC
VIH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C006AV-20JC | 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| CY7C006AV-25AC | 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| CY7C006AV-25JC | 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| CY7C1360 | Plastic Connector Backshell; Enclosure Material:Plastic; Enclosure Color:Beige; Features:Compatible with 101XX-6000EC Mini D Ribbon; Leaded Process Compatible:No; No. of Positions:36; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| CY7C1360B | BACKSHELL, MDR, 36WAY, SCREW; For use with:Mini D Ribbon Connectors; Material:Glass Reinforced Polyester (PBT); Colour:Black; Connector type:Backshell; Flammability rating:UL94V-0; Temp, op. max:85(degree C); Temp, op. min:-20(degree RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C006AV-20JC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| CY7C006AV-25AC | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC DUAL 3.3V 128KBIT 16KX8 25NS 64TQFP - Trays |
| CY7C006AV-25ACT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 3.3V 128K-Bit 16K x 8 25ns 64-Pin TQFP T/R |
| CY7C006AV-25AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3V 16Kx8 COM Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C006AV-25JC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
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