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參數(shù)資料
| 型號： | CY6264 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 8K x 8 Static RAM(8K x 8 靜態(tài)RAM) |
| 中文描述： | 8K的× 8靜態(tài)RAM（8K的× 8靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 254K |
| 代理商： | CY6264 |
8K x 8 Static RAM
CY6264
Cypress Semiconductor Corporation
Document #: 001-02367 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 8, 2006
Features
Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
High Speed
—
55 ns
CMOS for optimum speed/power
Easy memory expansion with CE
1
, CE
2
and OE
features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Available in Pb-free and non Pb-free 28-lead SNC
package
Functional Description
The CY6264 is a high-performance CMOS static RAM
organized as 8192 words by 8 bits. Easy memory expansion
is provided by an active LOW chip enable (CE
1
), an active
HIGH chip enable (CE
2
), and active LOW output enable (OE)
and three-state drivers. Both devices have an automatic
power-down feature (CE
1
), reducing the power consumption
by over 70% when deselected. The CY6264 is packaged in a
450-mil (300-mil body) SOIC.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE
1
and WE
inputs are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address
pins (A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location
addressed by the information on address pins is present on
the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to ensure alpha immunity.
Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
0
A
A
9
I/O
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
8K x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
R
S
POWER
DOWN
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
1
CE
2
WE
OE
Top View
SOIC
Logic Block Diagram
1
1
A
1
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY6264-000 | 制造商:TE Connectivity 功能描述:55A1111-20-9-9-5CF/1 - Bulk |
| CY6264-55SNC | 制造商:Rochester Electronics LLC 功能描述:64K (8K X 8)- SLOW ASYNCH SRAM - Bulk |
| CY6264-55SNCT | 制造商:Cypress Semiconductor 功能描述: |
| CY6264-55SNXC | 功能描述:IC SRAM 64KBIT 55NS 28SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY6264-55SNXCT | 功能描述:IC SRAM 64KBIT 55NS 28SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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