參數資料
型號: CY62256-70PC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 256K (32K x 8) Static RAM
中文描述: 32K X 8 STANDARD SRAM, 70 ns, PDIP28
封裝: 0.600 INCH, PLASTIC, DIP-28
文件頁數: 4/12頁
文件大?。?/td> 394K
代理商: CY62256-70PC
CY62256
Document #: 38-05248 Rev. *C
Page 4 of 12
AC Test Loads and Waveforms
Data Retention Characteristics
Parameter
V
DR
I
CCDR
Description
Conditions
[6]
Min.
2.0
Typ.
[2]
Max.
Unit
V
μ
A
μ
A
μ
A
μ
A
ns
ns
V
CC
for Data Retention
Data Retention Current
L
LL
LL - Ind’l
LL - Auto
V
CC
= 3.0V, CE > V
CC
0.3V,
V
IN
> V
CC
0.3V, or V
IN
< 0.3V
2
50
5
10
10
0.1
0.1
0.1
t
CDR[5]
t
R[5]
Chip Deselect to Data Retention Time
Operation Recovery Time
0
t
RC
Data Retention Waveform
Notes:
6.
No input may exceed V
CC
+ 0.5V.
3.0V
5V
OUTPUT
R1 1800
R2
990
100 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
< 5 ns
< 5 ns
5V
OUTPUT
R1 1800
R2
990
5 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
(a)
(b)
OUTPUT
1.77V
THé ENIN EQUIVALENT
639
ALL INPUT PULSES
3.0V
3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
Thermal Resistance
Description
Test Conditions
Symbol
Θ
JA
DIP
75.61
SOIC
76.56
TSOP
93.89
RTSOP
93.89
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
[5]
Thermal Resistance
(Junction to Case)
[5]
Still Air, soldered on a 4.25 x 1.125
inch, 4-layer printed circuit board
Θ
JC
43.12
36.07
24.64
24.64
°
C/W
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