參數(shù)資料
型號： CY62167DV18LL-70
廠商： Cypress Semiconductor Corp.
英文描述： 4NC Direct Opening
中文描述： 1,600（1024K × 16）靜態(tài)RAM
文件頁數(shù)： 3/11頁
文件大小： 161K
代理商： CY62167DV18LL-70
PRELIMINARY
CY62167DV18
MoBL2
Document #: 38-05326 Rev. *A
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage to Ground
Potential..........................................
0.2V to V
CCMAX
+ 0.2V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................
0.2V to V
CC
+ 0.2V
Product Portfolio
DC Input Voltage
[3]
................................
0.2V to V
CC
+ 0.2V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Industrial
Ambient Temperature (T
A
)
40
°
C to +85
°
C
V
CC
[4]
1.65V to 1.95V
Product
CY62167DV18L
V
CC
Range(V)
Typ.
1.8
Speed
(ns)
55
70
55
70
Power Dissipation
Operating, Icc (mA)
f = 1 MHz
Typ.
Max.
1.5
5
Standby, I
SB2
(
μ
A)
Typ.
2.5
2.5
2.5
2.5
f = f
MAX
Typ.
15
12
15
12
Min.
1.65
Max.
1.95
Max.
30
25
30
25
Max.
30
30
20
20
CY62167DV18LL
1.65
1.8
1.95
1.5
5
DC Electrical Characteristics
(over the operating range)
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
I
OH
=
0.1 mA
I
OL
= 0.1 mA
CY62167DV18-55
Min.
Typ.
1.4
CY62167DV18-70
Min.
Typ.
1.4
Unit
V
V
V
Max.
Max.
V
CC
= 1.65V
V
CC
= 1.65V
0.2
V
CC
+
0.2
0.4
+1
+1
0.2
V
CC
+
0.2
0.4
+1
+1
1.4
1.4
V
IL
I
IX
I
OZ
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
–
0.2
–
1
–
1
–
0.2
–
1
–
1
V
μ
A
μ
A
GND < V
O
< V
CC
, Output
Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
I
CC
Vcc = 1.95V,
I
OUT
= 0mA,
CMOS level
15
1.5
30
5
12
1.5
25
5
mA
I
SB1
Automatic CE
Power-down Current
CMOS Inputs
CE
1
> V
CC
0.2V, CE
2
<
0.2V, V
IN
> V
CC
0.2V,
V
IN
< 0.2V, f = f
MAX
(Address and Data Only), f
= 0 (OE, WE, BHE and
BLE)
CE
1
> V
CC
0.2V, CE
2
<
0.2V, V
IN
> V
CC
0.2V or
V
IN
< 0.2V, f = 0,
V
CC
=1.95V
L
LL
2.5
2.5
30
20
2.5
2.5
30
20
μ
A
I
SB2
Automatic CE
Power-down Current
CMOS Inputs
L
LL
2.5
2.5
30
20
2.5
2.5
30
20
μ
A
Capacitance
[5]
Parameter
Description
Test Conditions
TA = 25
°
C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
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