參數(shù)資料
型號: CY62148ELL
廠商: Cypress Semiconductor Corp.
英文描述: 4-Mbit (512K x 8) Static RAM
中文描述: 4兆位(為512k × 8)靜態(tài)RAM
文件頁數(shù): 10/10頁
文件大?。?/td> 860K
代理商: CY62148ELL
CY62148E MoBL
Document #: 38-05442 Rev. *F
Page 10 of 10
Document History Page
Document Title: CY62148E MoBL
, 4-Mbit (512K x 8) Static RAM
Document Number: 38-05442
Issue
Date
Change
**
201580
01/08/04
*A
249276
See ECN
REV.
ECN NO.
Orig. of
Description of Change
AJU
SYT
New Data Sheet
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Added RTSOP II and Removed FBGA Package
Changed V
CC
stabilization time in footnote #7 from 100
μ
s to 200
μ
s
Changed I
CCDR
from 2.0
μ
A to 2.5
μ
A
Changed typo in Data Retention Characteristics(t
R
) from 100
μ
s to t
RC
ns
Changed t
OHA
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
Changed t
HZOE
, t
HZWE
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for 45
ns Speed Bin
Changed t
SCE
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns Speed
Bin
Changed t
HZCE
from 12 to18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
Speed Bin
Changed t
SD
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
45 ns Speed Bin
Changed t
DOE
from 15 to 18 ns for 35 ns Speed Bin
Corrected typo in Package Name
Changed Ordering Information to include Pb-Free Packages
Changed from Preliminary to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62148E
Changed I
CC
(Typ) value from 1.5 mA to 2 mA at f=1 MHz
Changed I
CC
(Max) value from 2 mA to 2.5 mA at f=1 MHz
Changed I
CC
(Typ) value from 12 mA to 15 mA at f=f
max
Removed I
SB1
spec from the Electrical characteristics table
Changed I
SB2
Typ values from 0.7
μ
A to 1
μ
A and Max values from 2.5
μ
A to 7
μ
A
Modified footnote #4 to include current limit
Removed redundant footnote on DNU pins
Changed the AC testload capacitance from 100 pF to 30 pF on page #4
Changed test load parameters R1, R2, R
and V
TH
from 1838
, 994
,
645
and 1.75V to 1800
, 990
, 639
and 1.77V
Changed I
CCDR
from 2.5
μ
A to 7
μ
A
Added I
CCDR
typical value
Changed t
LZOE
from 3 ns to 5 ns
Changed t
LZCE
and t
LZWE
from 6 ns to 10 ns
Changed t
HZCE
from 22 ns to 18 ns
Changed t
PWE
from 30 ns to 35 ns
Changed t
SD
from 22 ns to 25 ns
Updated the ordering information table and replaced Package Name column with
Package Diagram
Included Automotive Range in product offering
Updated the Ordering Information
Corrected the operating range to 4.5V - 5.5V on page# 3
Added footnote #8
Added V
IL
spec for SOIC package
Added Automotive-A part and its related information
Removed Automotive-E part and its related information
Added footnote #2 related to SOIC package
Added footnote #9 related to I
SB2
Added AC values for 55 ns Industrial-SOIC range
Updated Ordering Information table
*B
414820
See ECN
ZSD
*C
464503
See ECN
NXR
*D
*E
485639
833080
See ECN
See ECN
VKN
VKN
*F
890962
See ECN
VKN
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CY62148ELL-45ZSXAT 功能描述:靜態(tài)隨機(jī)存取存儲器 4096KB 45ns 2mA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray