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參數(shù)資料
| 型號： | CY62147DV30LL-70BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 359K |
| 代理商： | CY62147DV30LL-70BVI |
CY62147DV30
Document #: 38-05340 Rev. *F
Page 4 of 12
Data Retention Waveform
[13]
Notes:
10.Tested initially and after any design or process changes that may affect these parameters.
11.Test condition for the 45-ns part is a load capacitance of 30 pF.
12.Full device operation requires linear V
ramp from V
to V
> 100
μ
s or stable at V
> 100
μ
s.
13.BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Capacitance
(for all packages)
[10]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
10
10
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
Thermal Resistance
[10]
Parameter
Θ
JA
Description
Test Conditions
VFBGA
72
TSOP II
75.13
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still Air, soldered on a 3 × 4.5 inch, four-layer
printed circuit board
Θ
JC
8.86
8.95
°
C/W
AC Test Loads and Waveforms
[10]
Parameters
R1
R2
R
TH
V
TH
2.50V
16667
15385
8000
1.20
3.0V
1103
1554
645
1.75
Unit
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
Conditions
Min.
1.5
Typ.
[5]
Max.
Unit
V
μ
A
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.5V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V
L (Auto-E)
LL (Ind’l/Auto-A)
15
6
t
CDR[10]
Chip Deselect to Data Retention
Time
Operation Recovery Time
0
ns
t
R[12]
t
RC
ns
V
CC
V
CC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to:
THé ENIN EQUIVALENT
R
TH
ALL INPUT PULSES
R1
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5 V
DATA RETENTION MODE
t
R
V
CC
CE or
BHE.BLE
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62147DV30LL-70BVXA | 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 3.0V SUPER LO PWR 256KX16 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62147DV30LL-70BVXAT | 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 3.0V SUPER LO PWR 256KX16 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62147DV30LL-70BVXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV30LL-70ZSXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV30LL-70ZSXIT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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