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參數(shù)資料
| 型號： | CY62147DV18L-70BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mb (256K x 16) Static RAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 272K |
| 代理商： | CY62147DV18L-70BVI |
CY62147CV18 MoBL2
Document #: 38-05011 Rev. *B
Page 7 of 12
Notes:
15. Data I/O is high impedance if OE = V
.
16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
17. During this period, the I/Os are in output state and input signals should not be applied.
Switching Waveforms
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE
17
Write Cycle No. 1(WE Controlled)
BHE/BLE
t
BW
[11, 15, 16]
t
HD
t
SD
t
PWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE 17
Write Cycle No. 2 (CE
Controlled)
BHE/BLE
t
BW
[11, 15, 16]
t
SA
相關PDF資料 |
PDF描述 |
|---|---|
| CY62147DV18L-70BVXI | 4-Mb (256K x 16) Static RAM |
| CY62147DV18LL-55BVI | 4-Mb (256K x 16) Static RAM |
| CY62147DV18LL-55BVXI | 4-Mb (256K x 16) Static RAM |
| CY62147DV18LL-70BVI | 4-Mb (256K x 16) Static RAM |
| CY62147DV18LL-70BVXI | 4-Mb (256K x 16) Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY62147DV18L-70BVXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mb (256K x 16) Static RAM |
| CY62147DV18LL-55BVI | 制造商:Rochester Electronics LLC 功能描述:4MB (256K X 16) 1.8V SUPER LOW POWER SLOW SRAM - Bulk |
| CY62147DV18LL-55BVXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mb (256K x 16) Static RAM |
| CY62147DV18LL-70BVI | 制造商:Rochester Electronics LLC 功能描述:4MB (256K X 16) 1.8V SUPER LOW POWER SLOW SRAM - Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY62147DV18LL-70BVIT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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