參數(shù)資料
型號(hào)： CY62147CV33
廠商： Cypress Semiconductor Corp.
英文描述： 256K x 16 Static RAM
中文描述： 256K × 16靜態(tài)RAM
文件頁數(shù)： 4/12頁
文件大小： 272K
代理商： CY62147CV33
CY62147CV18 MoBL2
Document #: 38-05011 Rev. *B
Page 4 of 12
Notes:
6.
7.
Full device operation requires linear V
ramp from V
to V
>
100
μ
s or stable at V
>
100
μ
s.
BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
AC Test Loads and Waveforms
V
CC
Typ
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
V
Equivalent to:
TH
é
VENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Rise Time:
1 V/ns
Fall Time:
1 V/ns
Parameters
R1
R2
R
TH
V
TH
1.8V
13500
10800
6000
0.80
UNIT
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
Description
Conditions
Min.
1.0
Typ.
[4]
Max.
1.95
8
Unit
V
μ
A
V
CC
for Data Retention
I
CCDR
Data Retention Current
V
CC
= 1.0V
CE > V
CC
0.2V,
V
IN
> V
CC
0.2V or V
IN
< 0.2V
1
t
CDR[5]
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
ns
t
R[6]
t
RC
ns
Data Retention Waveform
[7]
V
CC(min.)
t
R
V
CC(min.)
t
CDR
V
DR
> 1.0 V
DATA RETENTION MODE
CE or
V
CC
BHE,BHE
相關(guān)PDF資料
PDF描述
CY62147CV33LL-55BAI 256K x 16 Static RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62147CV33-70BVI 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY62147CV33LL-55BAI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 55ns 48-Pin FBGA 制造商:Rochester Electronics LLC 功能描述:4MB (256KX16) SRAM SLOW 3.3V SUPER LOW POWER - Bulk
CY62147CV33LL-55BAIT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 55ns 48-Pin FBGA T/R
CY62147CV33LL-55BVI 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 55NS 48VFBGA - Bulk
CY62147CV33LL-55BVIT 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 55NS 48VFBGA - Tape and Reel
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