參數(shù)資料
型號(hào)： CY62136VN
廠商： Cypress Semiconductor Corp.
英文描述： 2-Mbit (128K x 16) Static RAM
中文描述： 2兆位（128K的× 16）靜態(tài)RAM
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 569K
代理商： CY62136VN
CY62136VN MoBL
Document #: 001-06510 Rev. *A
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential...............–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[4]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[4]
.................................–0.5V to V
CC
+ 0.5V
Electrical Characteristics
Over the Operating Range
Output Current into Outputs (LOW)............................ 20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient Temperature [T
A
]
[5]
40°C to +85°C
–40
°
C to +85
°
C
–40
°
C to +125
°
C
V
CC
2.7V to
3.6V
Industrial
Automotive-A
Automotive-E
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage V
CC
= 2.7V, I
OH
=
1.0 mA
Output LOW Voltage V
CC
= 2.7V, I
OL
= 2.1 mA
Input HIGH Voltage
V
CC
= 3.6V
Test Conditions
-55
-70
Unit
V
V
V
Min.
2.4
Typ.
[2]
Max.
Min.
2.4
Typ.
[2]
Max.
0.4
V
CC
+
0.5V
0.8
+1
+1
0.4
V
CC
+
0.5V
0.8
+1
+1
+10
+1
+1
+10
15
15
20
2
2
2
100
100
100
15
15
20
2.2
2.2
V
IL
I
IX
Input LOW Voltage
Input Leakage
Current
V
CC
= 2.7V
GND < V
I
< V
CC
–0.5
–1
–1
–0.5
–1
–1
–10
–1
–1
–10
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
Ind’l
Auto-A
Auto-E
Ind’l
Auto-A
Auto-E
Ind’l
Auto-A
Auto-E
Ind’l
Auto-A
Auto-E
Ind’l
Auto-A
Auto-E
Ind’l
Auto-A
Auto-E
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
,
Output Disabled
–1
–1
+1
+1
I
CC
V
CC
Operating
Supply
Current
f = f
MAX
= 1/t
RC
V
CC
= 3.6V,
I
OUT
= 0 mA,
CMOS
Levels
7
7
20
20
7
7
7
1
1
1
f = 1 MHz
1
1
2
2
mA
I
SB1
Automatic CE
Power-down
Current—
CMOS Inputs
Automatic CE
Power-down
Current—
CMOS Inputs
CE > V
CC
0.3V,
V
IN
> V
CC
0.3V or
V
IN
< 0.3V, f = f
MAX
100
100
μ
A
μ
A
μ
A
μ
A
I
SB2
CE > V
CC
0.3V
V
IN
> V
CC
0.3V or
V
IN
< 0.3V, f = 0
1
1
15
15
1
1
1
Capacitance
[6]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Notes:
4. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
5. T
is the “Instant-On” case temperature.
6. Tested initially and after any design or process changes that may affect these parameters.
Input Capacitance
Output Capacitance
[+] Feedback
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CY62136VNLL-55ZSXAT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 3.0V SUPER LO PWR 128K X 16 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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