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參數(shù)資料
| 型號： | CY62136EV30LL-45BVXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 45 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 567K |
| 代理商： | CY62136EV30LL-45BVXI |
CY62136EV30
MoBL
Document #: 38-05569 Rev. *B
Page 12 of 12
Document History Page
Document Title: CY62136EV30 MoBL
2-Mbit (128K x 16) Static RAM
Document Number: 38-05569
REV.
**
*A
ECN NO.
237432
419988
Issue Date
See ECN
See ECN
Orig. of
Change
AJU
RXU
Description of Change
New Data Sheet
Converted from Advanced Information to Final.
Changed the address of Cypress Semiconductor Corporation on Page #1
from “3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62136EV30
Changed I
CC
(Max) value from 2 mA to 2.5 mA and I
CC
(Typ) value from
1.5 mA to 2 mA at f=1 MHz
Changed I
CC
(Typ) value from 12 mA to 15 mA at f = f
max
Changed I
SB1
and I
SB2
Typ. values from 0.7
μ
A to 1
μ
A and Max. values from
2.5
μ
A to 7
μ
A.
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed V
DR
from 1.5V to 1V on Page# 4.
Changed I
CCDR
from 2.5
μ
A to 3
μ
A.
Added I
CCDR
typical value.
Changed t
OHA ,
t
LZCE
and t
LZWE
from 6 ns to 10 ns
Changed t
LZBE
from 6 ns to 5 ns
Changed t
LZOE
from 3 ns to 5 ns
Changed t
HZOE,
t
HZCE,
t
HZBE
and t
HZWE
from 15 ns to 18 ns
Changed t
SCE,
t
AW and
t
BW
from 40 ns to 35 ns
Changed t
PWE
from 30 ns to 35 ns
Changed t
SD
from 20 ns to 25 ns
Corrected typo in the Truth Table on Page# 9
Updated the package diagram 48-pin VFBGA from *B to *D
Updated the ordering Information table and replaced the Package Name
column with Package Diagram.
Minor change: Moved datasheet to external web
*B
427817
See ECN
NXR
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY62136EV30LL-45ZSXI | 2-Mbit (128K x 16) Static RAM |
| CY62136FV30 | 2-Mbit (128K x 16) Static RAM |
| CY62136FV30LL | 2-Mbit (128K x 16) Static RAM |
| CY62136FV30LL-45BVXI | 2-Mbit (128K x 16) Static RAM |
| CY62136FV30LL-45ZSXI | 2-Mbit (128K x 16) Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY62136EV30LL-45BVXIT | 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 128KX16 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136EV30LL45ZSXI | 制造商:Cypress Semiconductor 功能描述: |
| CY62136EV30LL-45ZSXI | 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 128KX16 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136EV30LL-45ZSXI | 制造商:Cypress Semiconductor 功能描述:IC SRAM 2MBIT PARALLEL 45NS TSOP-44 制造商:Cypress Semiconductor 功能描述:IC, SRAM, 2MBIT, PARALLEL, 45NS, TSOP-44 |
| CY62136EV30LL-45ZSXIT | 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 128KX16 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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