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參數(shù)資料
| 型號： | CY62136EV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 2兆位（128K的× 16）靜態(tài)RAM |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 567K |
| 代理商： | CY62136EV30 |
CY62136EV30
MoBL
Document #: 38-05569 Rev. *B
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground
Potential ..............................–0.3V to 3.9V (V
CC MAX
+ 0.3V)
DC Voltage Applied to Outputs
in High-Z State
[5,6]
................–0.3V to 3.9V (V
CC MAX
+ 0.3V)
Electrical Characteristics
Over the Operating Range
[5, 6, 7]
DC Input Voltage
[5,6]
............ –0.3V to 3.9V (V
CC MAX
+ 0.3V)
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
[7]
Capacitance
(for all packages)
[8]
Device
Range
Industrial –40°C to +85°C 2.2V - 3.6V
Ambient
Temperature
V
CC
[7]
CY62136EV30LL
Parameter
V
OH
Description
Output HIGH
Voltage
Test Conditions
V
CC
= 2.20V
V
CC
= 2.70V
V
CC
= 2.20V
V
CC
= 2.70V
45 ns
Typ.
[4]
Unit
V
V
V
V
V
V
V
V
μ
A
Min.
2.0
2.4
Max.
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1mA
V
OL
Output LOW
Voltage
0.4
0.4
V
IH
Input HIGH Voltage V
CC
= 2.2V to 2.7V
1.8
2.2
–0.3
–0.3
–1
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
V
CC
= 2.7V to 3.6V
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
GND < V
I
< V
CC
V
IL
Input LOW Voltage
I
IX
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
I
OZ
GND < V
O
< V
CC
, Output Disabled
–1
+1
μ
A
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
CE > V
CC
0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE, and WE),
V
CC
= 3.60V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V, f = 0,
V
CC
= 3.60V
V
CC
= V
CCmax,
I
OUT
= 0 mA
CMOS levels
15
2
1
20
2.5
7
mA
I
SB1
Automatic CE
Power-down
Current — CMOS
Inputs
μ
A
I
SB2
Automatic CE
Power-down
Current — CMOS
Inputs
1
7
μ
A
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
10
10
Unit
pF
pF
C
IN
C
OUT
Notes:
5. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
6. V
=V
+0.75V for pulse durations less than 20ns.
7. Full Device AC operation assumes a 100
μ
s ramp time from 0 to Vcc(min) and 200
μ
s wait time after V
CC
stabilization.
8. Tested initially and after any design or process changes that may affect these parameters.
Input Capacitance
Output Capacitance
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CY62136EV30_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62136EV30_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62136EV30_1106 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128 K x 16) Static RAM Automatic power down when deselected |
| CY62136EV30LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62136EV30LL-45BVXI | 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 128KX16 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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