參數(shù)資料
型號: CY62128EV30LL-55ZXE
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 1 Mbit (128K x 8) Static RAM
中文描述: 128K X 8 STANDARD SRAM, 55 ns, PDSO32
封裝: 8 X 20 MM, LEAD FREE, TSOP1-32
文件頁數(shù): 6/11頁
文件大小: 861K
代理商: CY62128EV30LL-55ZXE
Document #: 38-05579 Rev. *C
Page 6 of 11
CY62128EV30 MoBL
Switching Waveforms
Read Cycle 1
(Address transition controlled)
[15, 16]
Read Cycle No. 2
(OE controlled)
[10, 16, 17]
Write Cycle No. 1
(WE controlled)
[10, 15, 18, 19]
PREVIOUS DATA VALID
DATA VALID
RC
t
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
IMPEDANCE
I
CC
I
SB
HIGH
ADDRESS
CE
DATA OUT
V
CC
SUPPLY
CURRENT
OE
DATA VALID
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
ADDRESS
CE
WE
DATA IO
OE
NOTE
20
Notes:
15.The device is continuously selected. OE, CE
1
= V
IL
, CE
2
= V
IH
.
16.WE is HIGH for read cycle.
17.Address valid before or similar to CE
1
transition LOW and CE
2
transition HIGH.
18.Data IO is high impedance if OE = V
.
19.If CE
goes HIGH or CE
goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
20.During this period, the IOs are in output state. Do not apply input signals.
[+] Feedback
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