參數(shù)資料
型號(hào): CY62128DV30LL-55ZI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 20 POS PEEL-A-WAY® DIP SOCKET
中文描述: 128K X 8 STANDARD SRAM, 55 ns, PDSO32
封裝: 8 X 20 MM, TSOP1-32
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 196K
代理商: CY62128DV30LL-55ZI
CY62128DV30
MoBL
Document #: 38-05231 Rev. *C
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential ..........................................................
0.3V to 3.9V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................
0.3V to V
CC
+ 0.3V
Product Portfolio
DC Input Voltage
[3]
................................
0.3V to V
CC
+ 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Industrial
Ambient
Temperature (T
A
)
40°C to +85°C
V
CC
[4]
2.2V to 3.6V
Product
V
CC
Range (V)
Typ.
3.0
Speed
(ns)
55/70
55/70
Power Dissipation
Operating, Icc (mA)
f = 1 MHz
Typ.
[5]
Max.
0.85
1.5
0.85
1.5
Standby, I
SB2
(
μ
A)
Typ.
[5]
1.5
1.5
f = f
MAX
Min.
2.2
Max.
3.6
Typ.
[5]
5
5
Max.
10
10
Max.
5
4
CY62128DV30L
CY62128DV30LL
DC Electrical Characteristics
(Over the Operating Range)
Parameter
V
OH
Description
Test Conditions
CY62128DV30-55/70
Min.
Typ.
[5]
2.0
2.4
Unit
V
Max.
Output HIGH Voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
I
OH
=
0.1 mA
I
OH
=
1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
OL
Output LOW Voltage
0.4
0.4
V
V
IH
Input HIGH Voltage
1.8
2.2
0.3
0.3
1
1
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+1
10
1.5
V
V
IL
Input LOW Voltage
V
I
IX
I
OZ
I
CC
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply Cur-
rent
μ
A
μ
A
mA
Vcc = 3.6V,
I
OUT
= 0mA,
CMOS level
5
0.85
I
SB1
Automatic CE Power-down
Current
CMOS Inputs
CE
1
> V
CC
0.2V, CE
2
< 0.2V,
V
IN
> V
CC
0.2V, V
IN
< 0.2V,
f = f
MAX
(Address and Data Only),
f = 0 (OE, WE,)
CE
1
> V
CC
0.2V, CE
2
< 0.2V,
V
IN
> V
CC
0.2V or V
IN
< 0.2V,
f = 0, V
CC
=3.6V
L
LL
1.5
1.5
5
4
μ
A
I
SB2
Automatic CE Power-down
Current
CMOS Inputs
L
LL
1.5
1.5
5
4
μ
A
Capacitance
[6]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Notes:
3.
V
IL(min.)
=
2.0V for pulse durations less than 20 ns., V
IH(max.)
= Vcc
+
0.75V for pulse durations less than 20 ns
.
4.
Full device operation requires linear ramp of Vcc from 0V to Vcc(min) and Vcc must be stable at Vcc(min) for 500
μ
s.
5.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25°C.
6.
Tested initially and after any design or proces changes that may affect these parameters.
Input Capacitance
Output Capacitance
相關(guān)PDF資料
PDF描述
CY62128DV30 1 Mb (128K x 8) Static RAM
CY62128DV30L-55SI 1 Mb (128K x 8) Static RAM
CY62128DV30L-55ZAI 1 Mb (128K x 8) Static RAM
CY62128DV30L-55ZI 1 Mb (128K x 8) Static RAM
CY62128DV30L-55ZRI 1 Mb (128K x 8) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62128DV30LL-55ZRI 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1 Mb (128K x 8) Static RAM
CY62128DV30LL-55ZRXI 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1-Mb (128K x 8) Static RAM
CY62128DV30LL55ZXI 制造商:CYPRESS 功能描述:New
CY62128DV30LL-55ZXI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62128DV30LL-55ZXIT 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: