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參數(shù)資料
| 型號： | CY14B104L-ZSP15XCT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| 中文描述： | 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54 |
| 封裝： | ROHS COMPLIANT, TSOP2-54 |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 371K |
| 代理商： | CY14B104L-ZSP15XCT |
CY14B104L/CY14B104N
PRELIMINARY
Document #: 001-07102 Rev. *E
Page 7 of 21
Data Protection
The CY14B104L/CY14B104N protects data from corruption
during low-voltage conditions by inhibiting all externally
initiated STORE and write operations. The low voltage
condition is detected when V
CC
< V
SWITCH
. If the
CY14B104L/CY14B104N is in a write mode (both CE and WE
low) at power up, after a RECALL, or after a STORE, the write
will be
inhibited until a negative transition on CE or WE is
detected. This protects against inadvertent writes during
power up or brown out conditions.
Noise Considerations
Refer CY Application Note AN1064.
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相關PDF資料 |
PDF描述 |
|---|---|
| CY14B104L-ZSP15XI | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XIT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP25XCT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP25XI | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP25XIT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY14B104L-ZSP15XI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP20XCT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP20XI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP20XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM |
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