- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378996 > CY14B104L-ZS45XCT (CYPRESS SEMICONDUCTOR CORP) 4-Mbit (512K x 8/256K x 16) nvSRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | CY14B104L-ZS45XCT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| 中文描述： | 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO44 |
| 封裝： | ROHS COMPLIANT, TSOP2-44 |
| 文件頁(yè)數(shù)： | 6/21頁(yè) |
| 文件大?。?/td> | 371K |
| 代理商： | CY14B104L-ZS45XCT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)
CY14B104L/CY14B104N
PRELIMINARY
Document #: 001-07102 Rev. *E
Page 6 of 21
Preventing AutoStore
The AutoStore function can be disabled by initiating an
AutoStore disable sequence. A sequence of read operations
is performed in a manner similar to the software STORE
initiation. To initiate the AutoStore disable sequence, the
following sequence of CE controlled read operations must be
performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore can be re-enabled by initiating an AutoStore
enable sequence. A sequence of read operations is performed
in a manner similar to the software RECALL initiation. To
initiate the AutoStore enable sequence, the following
sequence of CE controlled read operations must be
performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled a manual
STORE operation (hardware or software) must be issued to
save the AutoStore state through subsequent power down
cycles. The part comes from the factory with AutoStore
enabled.
Table 1. Mode Selection
CE
H
L
L
L
WE
X
H
L
H
OE
X
L
X
L
A15 - A0
X
X
X
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
Mode
IO
Power
Standby
Active
Active
Active
Not Selected
Read SRAM
Write SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Autostore
Disable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Autostore
Enable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Store
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Recall
Output High Z
Output Data
Input Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4B46
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Active
[2,3,4]
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active
I
CC2
[2,3,4]
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active
[2,3,4]
Notes
2. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
3. While there are 19 address lines on the CY14B104L/CY14B104N, only the lower 16 lines are used to control software modes.
4. IO state depends on the state of OE. The IO table shown assumes OE LOW.
[2,3,4]
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY14B104L-ZS45XI | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZS45XIT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XCT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XI | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XIT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY14B104L-ZS45XI | 功能描述:NVRAM 4 Mbit (512K x 8) 45ns nvSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B104L-ZS45XIT | 功能描述:NVRAM 512Kb x 8, 2.7-3.6V 45ns nvSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B104L-ZSP15XCT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP15XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。