參數(shù)資料
型號(hào)： CXK79M36C160GB
英文描述： MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
中文描述： 內(nèi)存SigmaRAM 16Meg 1x1 HSTL的I / O（為512k × 36）（27頁(yè)364K牧師7/6/01）
文件頁(yè)數(shù)： 1/30頁(yè)
文件大?。?/td> 554K
代理商： CXK79M36C160GB
18Mb 1x1Lp, HSTL, rev 1.0
1 / 30
July 19, 2002
CXK79M72C160GB
CXK79M36C160GB
SONY
Σ
RAM
33/4/5
CXK79M18C160GB
18Mb 1x1Lp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36 or 1Mb x 18)
Preliminary
Description
The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36
bits), and the CXK79M18C160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs
with common I/O pins. They are manufactured in compliance with the JEDEC-standard 209 pin BGA package pinouts defined
for SigmaRAMs. They integrate input registers, high speed RAM, output registers, and a two-deep write buffer onto a single
monolithic IC. Single Data Rate (SDR) Pipelined (PL) read operations and Late Write (LW) write operations are supported,
providinga high-performance userinterface. Positive andnegativeoutputclocks are providedforapplications requiringsource-
synchronous operation.
All address and control input signals are registered on the rising edge of the CK differential input clock.
During read operations, output data is driven valid once, from the rising edge of CK, one full cycle after the address and control
signals are registered.
During write operations, input data is registered once, on the rising edge of CK, one full cycle after the address and control
signals are registered.
Output drivers are series-terminated, and output impedance is programmable via the ZQ control pin. When an external resistor
RQ is connected between ZQ and V
SS
, the impedance of the SRAM’s output drivers is set to ~RQ/5.
300 MHz operation (300 Mbps) is obtained from a single 1.8V power supply. JTAG boundary scan interface is provided using
a subset of IEEE standard 1149.1 protocol.
Features
3 Speed Bins
-33
-4
-5
Cycle Time / Data Access Time
3.3ns / 1.8ns
4.0ns / 2.1ns
5.0ns / 2.3ns
Single 1.8V power supply (V
DD
): 1.7V (min) to 1.95V (max)
Dedicated output supply voltage (V
DDQ
): 1.4V (min) to V
DD
(max)
HSTL-compatible I/O interface with dedicated input reference voltage (V
REF
): V
DDQ
/2 typical
Common I/O
Single Data Rate (SDR) data transfers
Pipelined (PL) read operations
Late Write (LW) write operations
Burst capability with internally controlled Linear Burst address sequencing
Burst length of two, three, or four, with automatic address wrap
Full read/write data coherency
Byte write capability
Differential input clocks (CK and CK)
Data-referenced output clocks (CQ1, CQ1, CQ2, CQ2)
Programmable output driver impedance via dedicated control pin (ZQ)
Depth expansion capability (2 or 4 banks) via programmable chip enables (E2, E3, EP2, EP3)
JTAG boundary scan (subset of IEEE standard 1149.1)
209 pin (11x19), 1mm pitch, 14mm x 22mm Ball Grid Array (BGA) package
相關(guān)PDF資料
PDF描述
CXK79M36C161GB MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M36C163GB MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01)
CXK79M36C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
CXK79M36C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M72C160GB MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M36C161GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M36C162GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C162GB-33 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C162GB-4 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C162GB-5 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
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