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參數(shù)資料
| 型號： | CXK77V1810GB |
| 廠商： | Sony Corporation |
| 英文描述： | 65,536-Word-by-18-Bit High-Speed CMOS Synchronous Static RAM(65,536字 × 18位高速CMOS同步靜態(tài)RAM) |
| 中文描述： | 65,536字按18位高速CMOS同步靜態(tài)隨機(jī)存儲器（65536字× 18位高速的CMOS同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | CXK77V1810GB |
CXK77V1810GB/TM
-9/10/12
65,536-Word-by-18-Bit High-Speed CMOS Synchronous Static RAM
Preliminary
Description
The CXK77V1810GB/TM is a high-speed CMOS syn-
chronous static RAM with common I/O pins, organized
as 65,536-words-by-18-bits. This synchronous SRAM
integrates input registers, high-speed SRAM and output
registers onto a single monolithic IC. All input signals,
except
OE
, are latched at the positive edge of an exter-
nal clock (CLK). The RAM data from the previous cycle
is presented at the positive edge of the subsequent clock
cycle. Write operation is initiated by the positive edge of
CLK and is internally self-timed. This feature eliminates
complex off-chip write pulse generation and provides in-
creased flexibility for incoming signals. Asynchronous
OE
adds the flexibility of data bus control. 100MHz oper-
ation is obtained from a single 3.3V power supply.
–1–
Rev. 7.1
Features
High speed, low power consumption
Single +3.3V power supply: 3.3V ± 5%
Inputs and outputs are LVTTL/LVCMOS-compatible
Byte Select capability
Asynchronous
OE
Common data input and output
9ns cycle time (110MHz)
All inputs (except
OE
) and outputs are registered on a
single clock edge
Self-timed write cycle
Package line-up:
— GB: 7 x 17 Plastic Ball Grid Array with 50mil pitch
— TM: 400mil, 50-pin TSOP II with .8mm pitch
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implica-
tion or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices.
Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Functional Block Diagram
CLK
CLK
C
CLK
Self-Timed
Write Logic
Register
Register
Sense Amp
64Kx 18
RAM
Decoder
Register
R
A0
A15
I/O 0
I/O 17
CE
OE
WE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77V1810TM | 65,536-Word-by-18-Bit High-Speed CMOS Synchronous Static RAM(65,536字 × 18位高速CMOS同步靜態(tài)RAM) |
| CXK77V1840GB | 262,144-Word By 18-bit High Speed CMOS Synchronous Static RAM(262,144字 × 18位高速CMOS同步靜態(tài)RAM) |
| CXK79M36C162GB | Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 450V; Case Size: 30x30 mm; Packaging: Bulk |
| CXK79M36C162GB-33 | 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-4 | 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77V184DGB8 | 制造商:SONY 功能描述:New |
| CXK77V3211Q | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word by 32-bit High Speed Synchronous Static RAM |
| CXK77V3211Q11 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| CXK77V3211Q-12 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word by 32-bit High Speed Synchronous Static RAM |
| CXK77V3211Q-14 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word by 32-bit High Speed Synchronous Static RAM |
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