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參數(shù)資料
| 型號： | CXK77B3610GB- |
| 廠商： | Sony Corporation |
| 英文描述： | High Speed Bi-CMOS Synchronous Static RAM |
| 中文描述： | 高速雙CMOS同步靜態(tài)存儲器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 199K |
| 代理商： | CXK77B3610GB- |
Description
The CXK77B3610GB-6/7 is a high speed 1M bit
Bi-CMOS synchronous statis RAM organized as
32768 words by 36 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
Features
Fast cycle time
CXK77B3610GB-6
CXK77B3610GB-7
Inputs and outputs are LVTTL/LVCMOS compatible
Single 3.3V power supply: 3.3V ± 0.15V
Byte-write possible
OE asynchronization
JTAG test circuit
Package 119TBGA
3 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
(Cycle)
6ns
7ns
(Frequency)
166MHz
142MHz
Function
32768 word
×
36bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
– 1 –
CXK77B3610GB
-6/7
PE95128-PS
High Speed Bi-CMOS Synchronous Static RAM
For the availability of this product, please contact the sales office.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
119 pin BGA (Plastic)
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B3640GB | 4Mb Late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77P18E160GB-4AE | 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
| CXK77P36E160GB-4BE | 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
| CXK77P18E160GB-4BE | 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
| CXK77P36E160GB-4E | 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B3610GB-6 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3610GB-7 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Synchronous SRAM |
| CXK77B3611-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Synchronous SRAM |
| CXK77B3611-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Synchronous SRAM |
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