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參數(shù)資料
| 型號： | CXK5V16100TM |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 16-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 16位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 153K |
| 代理商： | CXK5V16100TM |
– 5 –
CXK5V16100TM
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE, UB, LB)
Output active from end of write
Write to output in high Z
Item
-85LLX
t
RC
t
AA
t
CO
t
BO
t
OE
t
OH
t
LZ
t
OLZ
t
BLZ
t
HZ
t
OHZ
t
BHZ
85
—
—
—
—
10
10
5
5
—
—
—
—
85
85
40
40
—
—
—
—
35
30
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time (CE)
Byte enable access time (UB, LB)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE)
Ouput enable to output in low Z (OE)
Byte enable to output in low Z (UB, LB)
Chip disable to output in high Z (CE)
Chip disable to output in high Z (OE)
Byte disable to output in high Z (UB, LB)
Read cycle
(WE = “H”)
t
HZ
,
t
OHZ
and
t
BHZ
are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
Min.
Max.
-10LLX
100
—
—
—
—
10
10
5
5
—
—
—
—
100
100
50
50
—
—
—
—
40
35
35
Min.
Max.
Unit
Symbol
Write cycle
t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage levels.
Item
-85LLX
t
WC
t
AW
t
CW
t
BW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
OW
t
WHZ
85
70
70
70
35
0
60
0
5
5
5
—
—
—
—
—
—
—
—
—
—
—
—
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min.
Max.
-10LLX
100
80
80
80
40
0
70
0
5
5
5
—
—
—
—
—
—
—
—
—
—
—
—
40
Min.
Max.
Unit
Symbol
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK5V16100TM-85LLX | 65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V8257BYM-10LL | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM-70LL | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BTM | 32768-word X 8-bit High Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5V16100TM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V16100TM-85LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V81000ATM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-85LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
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