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參數(shù)資料
| 型號(hào)： | CXK5V16100TM-85LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 16-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 16位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 153K |
| 代理商： | CXK5V16100TM-85LLX |
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CXK5V16100TM
V
CC
3.0V
2.0V
V
DR
CE
GND
t
CDRS
Data retention mode
t
R
CE
≥
V
CC
– 0.2V
Data retention voltage
Data retention current
Data retention
setup time
Recovery time
V
CC
= 3.3V, Ta = 25°C
V
DR
I
CCDR1
I
CCDR2
t
CDRS
t
R
CE
≥
V
CC
– 0.2V
V
CC
= 2.0 to 3.6V
Chip disable to data
retention mode
2.0
—
—
—
—
—
0
5
—
—
—
—
0.4
0.5
—
—
3.6
24
12
2.4
1.2
40
—
—
V
μA
μA
ns
ms
Item
Symbol
Test condition
Min.
Typ.
Max.
Unit
Data Retention Characteristics
(Ta = –25 to +85°C)
V
CC
= 3.0V
–25 to +85°C
–25 to +70°C
–25 to +40°C
+25°C
Data Retention Waveform
Low supply voltage data retention waveform
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| CXK5V8257BYM-10LL | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM-70LL | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BTM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BYM-70LL | 32768-word X 8-bit High Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5V81000ATM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-85LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM-10LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
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