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參數(shù)資料
| 型號： | CXK5T8512TN-12LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 216K |
| 代理商： | CXK5T8512TN-12LLX |
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CXK5T8512TM/TN
Write cycle (3) :
CE2 control
Address
OE
t
WC
t
AW
Data valid
t
CW
t
WR1
t
WP
t
DW
t
DH
High impedance
CE1
WE
Data out
Data in
t
AS
t
CW
(
3
)
CE2
1
Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2
Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
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相關代理商/技術參數(shù) |
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| CXK5V16100TM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V16100TM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V16100TM-85LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V81000ATM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
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