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參數(shù)資料
| 型號： | CXK5T8512TN-10LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 216K |
| 代理商： | CXK5T8512TN-10LLX |
– 9 –
CXK5T8512TM/TN
1
–25 to +85°C
–25 to +70°C
+25°C
V
CC
= 2.0 to 3.6V
1
Chip disable to data retention mode
Data retention voltage
Data retention setup time
Recovery time
1
CE1
≥
Vcc – 0.2V, CE2
≥
Vcc – 0.2V (CE1 control) or CE2
≤
0.2V (CE2 control)
2
Vcc = 3.3V, Ta = 25°C
V
DR
I
CCDR1
I
CCDR2
t
CDRS
t
R
2.0
—
—
—
—
0
5
—
—
—
0.2
0.24
2
—
—
3.6
12
6
—
14
—
—
V
μA
μA
ns
ms
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Data Retention Characteristics
(Ta = –25 to +85°C)
Data retention current
V
CC
= 3.0V
1
Data retention waveform
Low supply voltage data retention waveform (1)
(CE1 contol)
V
CC
2.7V
V
IH
V
DR
CE1
GND
t
CDRS
Data retention mode
CE1
≥
V
CC –
0.2V
Low supply voltage data retention waveform (2)
(CE2 contol)
t
R
Data retention mode
t
R
t
CDRS
CE2
≤
0.2V
V
CC
2.7V
V
IL
CE2
V
DR
GND
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| CXK5T8512TN-12LLX | 65536-word X 8-bit High Speed CMOS Static RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5T8512TN-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5V16100TM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V16100TM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V16100TM-85LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
| CXK5V81000ATM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
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