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參數(shù)資料
| 型號： | CXK5T8512TM-10LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 216K |
| 代理商： | CXK5T8512TM-10LLX |
– 4 –
CXK5T8512TM/TN
Input capacitance
I/O capacitance
Item
Symbol Test conditions
Min.
Typ.
Max.
Unit
C
IN
C
I/O
—
—
—
—
8
10
pF
pF
V
IN
= 0V
V
I/O
= 0V
AC Characteristics
AC test conditions
(Ta = –25 to +85°C)
I/O capacitance
(Ta = 25°C, f = 1MHz)
Note)
This parameter is sampled and is not 100% tested.
TTL
C
L
Test circuit
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
-10LLX
Output load conditions
-12LLX
V
IH
= 2.4V
V
IL
= 0.4V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 100pF, 1TTL
C
L
1
= 100pF, 1TTL
Item
V
CC
= 2.7 to 3.6V
Conditions
V
IH
= 2.2V
V
IL
= 0.6V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 30pF, 1TTL
C
L
1
= 100pF, 1TTL
V
CC
= 3.3V ± 0.3V
1
C
L
includes scope and jig capacitances.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK5T8512TM | 65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TN | 65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TM-12LLX | 65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TN-10LLX | 65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TN-12LLX | 65536-word X 8-bit High Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5T8512TM-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TN | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TN-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TN-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5V16100TM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed CMOS Static RAM |
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