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參數(shù)資料
| 型號： | CXK5T8257BM |
| 廠商： | Sony Corporation |
| 英文描述： | 32768-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 32768字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 209K |
| 代理商： | CXK5T8257BM |
– 5 –
CXK5T8257BTM/BYM/BM
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE)
Output active from end of write
Write to output in high Z
2
t
WHZ
is defined as the time requied for outputs to turn to high impedance state and is not referred to as
output voltage level.
Item
Symbol
Min.
Max.
Min.
Max.
-10LLX
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V ± 0.3V
-12LLX
Unit
t
RC
t
AA
t
CO
t
OE
t
OH
t
LZ
t
OLZ
t
HZ
1
t
OHZ
1
100
—
—
—
20
10
10
—
—
—
100
100
50
—
—
—
35
35
120
—
—
—
20
10
10
—
—
—
120
120
60
—
—
—
40
35
Min.
Max.
Min.
Max.
-10LLX
-12LLX
85
—
—
—
20
10
10
—
—
—
85
85
50
—
—
—
35
35
100
—
—
—
20
10
10
—
—
—
100
100
50
—
—
—
35
35
Read cycle time
Address access time
Chip enable access time (CE)
Chip enable to output valid
Chip hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
1
t
HZ
and
t
OHZ
are defined as the time required for outputs to turn to high impedance state and are not referred
to as output voltage levels.
Read cycle
(WE =
“
H”)
Write cycle
ns
Item
Symbol
Min.
Max.
Min.
Max.
-10LLX
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V ± 0.3V
-12LLX
Unit
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
OW
t
WHZ
2
100
80
80
35
0
60
0
0
0
10
—
—
—
—
—
—
—
—
—
—
—
35
120
100
100
50
0
70
0
0
0
10
—
—
—
—
—
—
—
—
—
—
—
40
Min.
Max.
Min.
Max.
-10LLX
-12LLX
85
80
80
35
0
60
0
0
0
10
—
—
—
—
—
—
—
—
—
—
—
35
100
80
80
35
0
60
0
0
0
10
—
—
—
—
—
—
—
—
—
—
—
35
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK5T8257BM-10LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM-12LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM-10LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM-12LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5T8257BM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM/BYM/BM-10LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32768-word x 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM/BYM/BM-12LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32768-word x 8-bit High Speed CMOS Static RAM |
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