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參數(shù)資料
| 型號： | CXK5B81020JM-12 |
| 廠商： | Sony Corporation |
| 英文描述： | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| 中文描述： | 131072字ⅴ8位高速雙CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 184K |
| 代理商： | CXK5B81020JM-12 |
– 7 –
CXK5B81020J/TM
Example of Representative Characteristics
t
CO
Supply current vs. Frequency
75
100
25
50
1.0
0.75
0.5
0.25
0
I
C
Supply current vs. Supply voltage
V
CC
— Supply voltage [V]
3.45
3.6
3.15
3.3
3.0
1.4
1.2
1.0
0.8
0.6
I
C
Supply current vs. Ambient temperature
Ta — Ambient temperature [°C]
60
80
20
40
0
1.4
1.2
1.0
0.8
0.6
I
C
Access time vs. Load capacitance
C
L
— Load capacitance [pF]
120
160
40
80
0
1.8
1.6
1.4
1.2
1.0
t
A
,
C
,
O
Ta = 25°C
V
CC
= 3.3V
Frequency (1/t
RC
, 1/t
WC
) [MHz]
0
Ta — Ambient temperature [°C]
60
80
20
40
0
1.4
1.2
1.0
0.8
0.6
Access time vs. Supply voltage
V
CC
— Supply voltage [V]
3.45
3.6
3.15
3.3
3.0
1.4
1.2
1.0
0.8
0.6
t
A
,
C
,
O
t
A
,
C
,
O
Access time vs. Load capacitance
12ns
t
OE
t
CO
, t
AA
Ta = 25°C
V
CC
= 3.3V
Ta = 25°C
t
AA
t
CO
t
OE
V
CC
= 3.3V
t
AA
t
CO
, t
OE
t
OE
t
AA
, t
CO
t
AA
t
OE
相關PDF資料 |
PDF描述 |
|---|---|
| CXK5T8257BYM-10LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BYM-12LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM-10LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM-12LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5B81020TM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020TM-12 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5T16100TM- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word x 16-bit High Speed CMOS Static RAM |
| CXK5T16100TM-10LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| CXK5T16100TM-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word x 16-bit High Speed CMOS Static RAM |
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