參數(shù)資料
型號: CXK5B81020J-12
廠商: Sony Corporation
英文描述: 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
中文描述: 131072字ⅴ8位高速雙CMOS靜態(tài)RAM
文件頁數(shù): 3/9頁
文件大?。?/td> 184K
代理商: CXK5B81020J-12
– 3 –
CXK5B81020J/TM
I/O
Zo = 50
R
L
= 50
V
L
= 1.4V
I/O
3.3V
1179
868
5pF
2
Output load (1)
Output Load (2)
1
1. t
LZ
, t
OLZ
, t
HZ
, t
OHZ
, t
OW
, t
WHZ
2. Including scope and jig capacitances
Fig. 1
Electrical Characteristics
DC Characteristics
(Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
Typ.
Vcc = 3.3V, Ta = 25°C
I/O Capacitance
(Ta = 25°C, f = 1MHz)
Note)
This parameter is sampled and is not 100% tested.
AC Characteristics
AC test condition
(Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)
Input leakage current
Output leakage current
Average operating current
Standby current
Output high voltage
Output low voltage
I
LI
I
LO
I
CC
I
SB1
I
SB2
V
OH
V
OL
V
IN
= GND to V
CC
CE = V
IH
or
OE = V
IH
or
WE = V
IL
V
I/O
= GND to V
CC
Cycle: Min.
Duty = 100%
I
OUT
= 0mA
CE = V
IL
V
IN
= V
IH
or V
IL
CE
V
CC
– 0.2V
V
IN
V
CC
– 0.2V or
V
IN
0.2V
Cycle: Min.
Duty = 100%
CE = V
IH
V
IN
= V
IH
or V
IL
I
OH
= –2.0mA
I
OL
= 2.0mA
–10
–10
2.4
Item
Symbol
Conditions
Min.
Max
Unit
Input capacitance
I/O capacitance
Item
Symbol
Conditions
Min.
Typ.
Max
Unit
C
IN
C
I/O
5
7
pF
pF
V
IN
= 0V
V
I/O
= 0V
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
V
IH
= 3.0V
V
IL
= 0.0V
t
r = 2ns
t
f = 2ns
1.4V
Fig. 1
Item
Condition
+10
+10
240
10
100
0.4
μA
μA
mA
mA
mA
V
V
相關(guān)PDF資料
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CXK5B81020TM 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK5B81020JM-12 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
CXK5B81020TM 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM
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