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參數(shù)資料
| 型號： | CXK58512TM-70LL |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 210K |
| 代理商： | CXK58512TM-70LL |
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CXK58512TM/M
-55LL/70LL/10LL
65536-word
×
8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
E94915A58-PK
Description
The CXK58512TM/M is a high speed CMOS static
RAM organized as 65536-words by 8 bits.
A polysilicon TFT cell technology realized extremely
low stand-by current and higher data retention
stability.
Special feature are low power consumption, high
speed.
The CXK58512TM/M is a suitable RAM for portable
equipment with battery back up.
Features
Fast access time
(Access time)
55ns (Max.)
70ns (Max.)
100ns (Max.)
10μA (Max.)
6μA (Max.)
-55LL
-70LL
-10LL
Low standby current
Low data retention current
Single +5V supply: +5V ± 10%
Low voltage data retention: 2.0V (Min.)
Broad package line-up
CXK58512TM
8mm
×
20mm 32 pin TSOP package
CXK58512M
525mil 32 pin SOP Package
Function
65536-word
×
8 bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Row
Decoder
Buffer
Buffer
I/O Buffer
V
CC
I/O1
I/O8
A15
A13
A8
A11
A9
A7
A6
A5
A14
A12
A4
A3
A10
A0
A2
A1
OE
WE
CE1
CE2
Buffer
I/O Gate
Column
Decoder
Memory
Matrix
1024
×
512
GND
CXK58512TM
32 pin TSOP (Plastic)
CXK58512M
32 pin SOP (Plastic)
Block Diagram
Under development
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