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參數(shù)資料
| 型號(hào)： | CXK582000TM-10LL |
| 廠商： | Sony Corporation |
| 英文描述： | 128 x 64 pixel format, LED Backlight available |
| 中文描述： | 262144字× 8位高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | CXK582000TM-10LL |
– 9 –
CXK582000TM/YM/M
0 to +70°C
0 to +40°C
+25°C
V
CC
= 2.0 to 5.5V
Chip disable to data retention mode
Data retention voltage
Data retention setup time
Recovery time
V
DR
I
CCDR1
I
CCDR2
t
CDRS
t
R
2.0
—
—
—
—
0
5
—
—
—
0.8
1.4
—
—
5.5
24
4.8
2.4
40
—
—
V
μA
μA
ns
ms
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Data Retention Characteristics
(Ta = 0 to +70°C)
CE1
≥
Vcc – 0.2V, CE2
≥
Vcc – 0.2V (CE1 control) or CE2
≤
0.2V (CE2 control)
Data retention current
V
CC
= 3.0V
1
Data retention waveform
Low supply voltage data retention waveform (1) (CE1 control)
V
CC
4.5V
2.2V
V
DR
CE1
GND
t
CDRS
Data retention mode
CE1 V
CC
– 0.2V
Low supply voltage data retention waveform (2) (CE2 control)
t
R
Data retention mode
t
R
t
CDRS
CE2 0.2V
V
CC
4.5V
0.4V
CE2
V
DR
GND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK582000M-85LL | 262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000TM | 262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000YM | 262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000M-10LL | 262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000TM-85LL | 128 x 64 pixel format, LED Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK582000TM-85LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000YM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000YM-10LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000YM-85LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
| CXK58255AJ-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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