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參數(shù)資料
| 型號(hào)： | CXK582000M-10LL |
| 廠商： | Sony Corporation |
| 英文描述： | 262144-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 262144字× 8位高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | CXK582000M-10LL |
– 8 –
CXK582000TM/YM/M
Address
OE
t
WC
t
AW
Data valid
t
CW
t
WR1
t
WP
t
DW
t
DH
High impedance
CE1
WE
Data out
Data in
t
AS
t
CW
(
3)
CE2
1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
Write cycle (3) : CE2 control
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK582000TM-85LL | 128 x 64 pixel format, LED Backlight available |
| CXK582000YM-10LL | 262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000YM-85LL | 262144-word X 8-bit High Speed CMOS Static RAM |
| CXK58512M-55LL | Cable; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| CXK58512M-70LL | Twinaxial Cable; Impedance:78ohm; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 2092; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK582000M-85LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000TM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
| CXK582000TM/YM/M-10LL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:262144-word x 8-bit High Speed CMOS Static RAM |
| CXK582000TM/YM/M-85LL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:262144-word x 8-bit High Speed CMOS Static RAM |
| CXK582000TM-10LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word X 8-bit High Speed CMOS Static RAM |
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