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參數(shù)資料
| 型號(hào)： | CXK581000ATM-55LL |
| 廠商： | Sony Corporation |
| 英文描述： | 131072-word x 8-bit High Speed CMOS Static RAM |
| 中文描述： | 131072字× 8位高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 288K |
| 代理商： | CXK581000ATM-55LL |
– 7 –
CXK581000ATM/AYM/AM/AP
Write cycle (2) :
CE1 control
Write cycle (3) :
CE2 control
1
2
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
Do not apply the data input voltage of the opposite phase to the output while the I/O pin is in output condition.
t
WC
OW
t
CW
t
AW
t
WP
t
AS
t
DH
t
DW
Data valid
High impedance
Address
OE
CE1
CE2
WE
Data in
Data out
t
CW
t
WR1
(
3)
t
WC
t
CW
t
AW
t
CW
t
WP
t
AS
t
DH
t
DW
t
WR1
Data valid
High impedance
Address
OE
CE1
CE2
WE
Data in
Data out
(
3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK581000ATM-55SL | 131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000ATM-70LL | 131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000ATM-70SL | 131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000AYM | 131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000AYM-10LL | ER 10C 10#16 PIN PLUG RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK581000ATM-55SL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000ATM-70LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000ATM-70LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| CXK581000ATM-70SL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
| CXK581000AYM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word x 8-bit High Speed CMOS Static RAM |
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