參數(shù)資料
型號: CXG1109EN
廠商: Sony Corporation
英文描述: Receive Dual Low Noise Amplifier/Mixer MMIC(雙路射頻輸入、低噪聲放大器/混頻器微波集成電路)
中文描述: 接收雙路低噪聲放大器/混頻器微波單片集成電路(雙路射頻輸入,低噪聲放大器/混頻器微波集成電路)
文件頁數(shù): 1/9頁
文件大小: 110K
代理商: CXG1109EN
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E00924-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXG1109EN
16 pin VSON (Plastic)
IF
OUT
LNA RF
IN
1
LO IN
LNA RF
IN
2
LNA RF
OUT
MIX RF
IN
1
3
6
8
9
16
IF
OUT
/V
DD
3 (MIX)
LNA RF
IN
1
CAP
GND
CTL
GND
GND
V
DD
2 (LO AMP)
LO IN
LNA RF
IN
2
CAP
GND
LNA RF
OUT
/V
DD
1 (LNA)
OPT
MIX RF
IN
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Receive Dual Low Noise Amplifier/Mixer
Description
The CXG1109EN is a receive dual low noise amplifier/
mixer MMIC. This IC is designed using the Sony
s
GaAs J-FET process.
Features
High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)
Gc = 9.5 to 10dB (MIX Typ.)
Low noise figure:
NF = 1.5dB (LNA Typ.)
NF = 4 to 5dB (MIX Typ.)
Single 3V power supply operation
Low LO input power operation P
LO
=
12.5dBm
Single CTL pin achieved by the built-in inverter
circuit
16-pin VSON package
Applications
800MHz Japan digital cellular telephones (PDC)
Structure
GaAs J-FET MMIC
Block Diagram
Absolute Maximum Ratings
(Ta = 25
°
C)
Supply voltage
Input power
Current consumption
Operating temperature Topr
Storage temperature
V
DD
P
IN
I
DD
4.5
+13
15
V
dBm
mA
°
C
°
C
35 to +85
65 to +150
Tstg
Recommended Operating Voltages
Supply voltage
Control voltage
V
DD
V
CTL
(H)
V
CTL
(L)
2.7 to 3.3
2.4 to 3.3
0 to 0.3
V
V
V
Pin Configuration
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
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