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參數(shù)資料
| 型號(hào)： | CUS03_06 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.56 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| 中文描述： | 開關(guān)電源的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | CUS03_06 |
CUS03
2006-11-13
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS03
Switching Mode Power Supply Applications
Portable Equipment Battery Application
Forward voltage: V
FM
= 0.52 V@I
F
= 0.7 A
Average forward current: I
F (AV)
= 0.7A
Repetitive peak reverse voltage: V
RRM
= 40 V
Suitable for compact assembly due to small surface-mount package
“US
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
40
V
Average forward current
I
F (AV)
0.7
(Note 1)
A
Peak one cycle surge forward current
I
FSM
20 (50 Hz)
A
Junction temperature
T
j
40 to 150
°C
Storage temperature range
T
stg
40 to 150
°C
Note 1: Ta = 53°C:
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm,
Land size: 6 mm × 6 mm
Rectangular waveform (
α
= 180°), V
R
= 20 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
I
FM
= 0.1 A
―
0.37
―
Peak forward voltage
V
FM (2)
I
FM
= 0.7 A
―
0.48
0.52
V
I
RRM (1)
V
RRM
= 5 V
―
0.4
―
Repetitive peak reverse current
I
RRM (2)
V
RRM
= 40 V
―
3.0
100
μ
A
Junction capacitance
C
j
V
R
= 10 V, f = 1.0 MHz
―
45
―
pF
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
―
―
75
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
―
―
150
°C/W
Thermal resistance (junction to lead)
R
th (j-
)
Junction to lead of cathode side
―
―
30
°C/W
Unit: mm
JEDEC
―
JEITA
TOSHIBA
3-2B1A
Weight: 0.004 g (typ.)
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| CUS04 | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.56 to 8.93; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CUS04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Mode Power Supply Applications |
| CUS04(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:SCHOTTKY 60V 0.7A 2PIN US-FLAT - Tape and Reel |
| CUS04(TE85L,Q) | 功能描述:肖特基二極管與整流器 Diode Schottky 60V 0.7A Vf=0.58V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| CUS04(TE85L,Q,M) | 功能描述:肖特基二極管與整流器 60V Vrrm .07A IF 20A 0.58V VFM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| CUS04(TE85R,Q) | 制造商:Toshiba America Electronic Components 功能描述:SCHOTTKY 60V 0.7A 2PIN US-FLAT - Tape and Reel |
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