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參數(shù)資料
| 型號： | CTN369 |
| 英文描述： | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-237 |
| 中文描述： | 晶體管|晶體管|進步黨| 20V的五（巴西）總裁| 500mA的一（c）|至237 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 121K |
| 代理商： | CTN369 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN368
CTN369
TO-237
Plastic Package
Complementary CTN 369
Amplifier Transistors.
ABSOLUTE MAXIMUM RATINGS(Ta=25o C unless specified otherwise )
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation @T
A
=25oC
Derate Above =25oC
Total Power Dissipation @T
C
=25oC
Derate Above =25oC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
C
P
D
VALUE
25
20
5
1
1.0
6.4
2.75
22
-55 to +150
UNIT
V
V
V
A
W
mW/oC
W
mW/oC
oC
P
D
T
j
, T
stg
THERMAL RESISTANCE
Junction to Case
Juction to Ambient
R
th(j-c)
R
th(j-a)
45
156
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Ta=25o C unless specified otherwise )
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
SYMBOL TEST CONDITION
V
CEO
I
C
=10mA, I
B
=0
V
CBO
I
C
=100
μ
A, I
E
=0
V
EBO
I
E
=100
μ
A, I
C
=0
I
CBO
V
CB
=25V, I
E
=0
I
E
=0, V
CB
=25V,
T
j
=150oC
I
EBO
V
EB
=5V, I
C
=0
V
BE(on)
I
C
=1A, V
CE
=1V
V
CE(sat)
I
C
=1A,I
B
=100mA
h
FE
I
C
=5mA,V
CE
=10V
I
C
=500mA,V
CE
=1V
I
C
=1A,V
CE
=1V
MIN
20
25
5
MAX
UNIT
V
V
V
μ
A
10
1
Emitter Cut off Current
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
10
1
0.5
μ
A
V
V
50
85
60
375
DYNAMIC CHARACTERISTICS
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA,
f=20MHz
65
MHz
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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