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參數資料
| 型號： | CSC5200FR |
| 英文描述： | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-247VAR |
| 中文描述： | 晶體管|晶體管|叩| 160V五（巴西）總裁| 12A條一（c）|至247VAR |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 40K |
| 代理商： | CSC5200FR |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON POWER TRANSISTOR
CSC5200F
TO-3P
POWER AMPLIFIER APPLICATIONS.
Complementary CSA1943F
MAXIMUM RATINGS(Ta=25 deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Base Current
Power Dissipation @ Tc=25 deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector-Cuttoff Current
Emitter-Cuttoff Current
Collector -Emitter Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj, Tstg
VALUE
160
160
5.0
12
1.2
90
-55 to +150
UNIT
V
V
V
A
A
W
deg C
SYMBOL
ICBO
IEBO
VCEO
hFE
TEST CONDITION
VCB=160V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
IC=1A,VCE=5V
IC=7A,VCE=5V
IC=8A, IB=0.8A
IC=7A,VCE=5V
VCE=5V, IC=1A
VCB=10V, IE=0
f=1MHz
R : 55-110, O : 80-160
MIN
-
-
160
55
35
-
-
-
-
TYP
-
-
-
-
-
-
-
30
200
MAX
5.0
5.0
-
160
-
3.0
1.5
-
-
UNIT
uA
uA
V
Collector Emitter Saturation Voltage
Base Emitter on Voltage
Transition Frequency
Collector Output Capacitance
VCE(Sat)
VBE(on)
ft
Cob
V
V
MHz
pF
*hFE Classification :
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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