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參數(shù)資料
| 型號(hào)： | CSC458B |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | CSC458B |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC458
TO-92
Plastic Package
Low Frequency Amplifier.
Complementary CSA 1029
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
E
P
C
T
j
, T
stg
VALUE
30
30
5.0
100
100
200
-55 to +150
UNIT
V
V
V
mA
mA
mW
oC
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Base Emitter On Voltage
Collector Emitter Saturation
Voltage
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
V
BE(on)
V
CE(sat)
*
I
C
=1mA,I
E
=0
I
C
=10
μ
A,I
E
=0
I
E
=10
μ
A, I
C
=0
V
CB
=18V, I
E
= 0
V
BE
=2V, I
C
= 0
V
CE
=12V,I
C
=2mA
I
C
=2mA,V
CE
=12V
I
C
=10mA,I
B
=1mA
30
30
5.0
V
V
V
n
Α
nA
500
500
500
0.75
0.20
100
V
V
<0.4
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC458C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| CSC458D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| CSC460 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| CSC460A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| CSC460B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
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