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參數(shù)資料
| 型號： | CSC2712L |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 硅外延平面晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 38K |
| 代理商： | CSC2712L |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
VCBO
max.
60 V
Collector-emitter voltage (open base)
VCEO
max.
50 V
Emitter-base voltage (open collector)
VEBO
max.
5 V
Collector current (d.c.)
IC
max.
150 mA
Base current
IB
max.
30 mA
Total power dissipation at Tamb = 25°C
Ptot
max.
150 mW
Junction temperature
Tj
max.
150 ° C
Storage temperature
Tstg
–50 to +150 ° C
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cut-off current
IE = 0; VCB = 60 V
ICBO
max.
100 nA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
100 nA
Saturation voltage
IC = 100 mA; IB = 10 mA
VCEsat
max.
250 mV
D.C. current gain
IC = 2 mA; VCE = 6 V
hFE
min.
70
max.
700
Y
min.
120
max.
240
GR(G)
min.
200
max.
400
BL(L)
min.
350
max.
700
Transition frequency
IC = 1 mA; VCE = 10 V
fT
min.
80 MHz
Noise figure at Rg = 10 kW
VCE = 6 V; IC = 0.1 mA
f = 1 kHz
NF
max.
10 dB
CSC2712
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CSC2712Y | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2713 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| CSC2713G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| CSC2713L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| CSC2786KF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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