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參數(shù)資料
| 型號： | CSC2712G |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 硅外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 38K |
| 代理商： | CSC2712G |
Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (peak value)
Total power dissipation at T
amb
= 25°C
Junction temperature
D.C. current gain
–I
C
= 2 mA; –V
CE
= 6V
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
max.
max.
max.
max.
max.
max.
60 V
50 V
5 V
150 mA
150 mW
150 ° C
h
FE
min.
max.
70
700
Transition frequency
I
C
= 1 mA; V
CE
= 10 V
Noise figure at R
S
= 10 K
W
I
C
= 0.1 mA; V
CE
= 6V;
f = 1 kHz
f
T
min.
80 MHz
F
max
10 dB
CSC2712
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
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| CSC3930 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC2712GR | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712GRG | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712L | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712Y | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2713 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
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