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參數(shù)資料
| 型號(hào)： | CSC1684S |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 65K |
| 代理商： | CSC1684S |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC1674
TO-92
Plastic Package
TV PIF Amplifier, FM Tuner RF Amplifier , Mixer, Oscillator
ABSOLUTE MAXIMUM RATINGS (Ta=25oC )
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
V
CBO
V
CEO
V
EBO
I
C
Pc
T
j
, T
stg
30
20
4
20
250
V
V
V
mA
mW
oC
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Base Emitter on Voltage
Collector Emitter Saturation
Voltage
Current Gain - Bandwidth Product
Output Capacitance
Collector- Base Time Constant
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE(sat)
I
C
=10
μ
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=30V, I
E
= 0
V
EB
=4V, I
C
= 0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
30
20
4
-
-
40
-
-
-
-
-
-
-
-
-
-
-
V
V
V
μ
A
μ
A
0.1
0.1
240
-
0.3
0.72
-
V
V
f
T
V
CE
=6V, I
C
=1mA
I
E
=0, V
CB
=6V, f=1MHz
V
CE
=6V, I
C
=1mA
f=31.9 MHz
400
-
-
-
-
-
MHz
pF
ps
C
ob
1.2
-
C
C
rbb'
15
Common Source Noise Figure
NF
V
CE
=6V, I
E
=1mA
Rs
=
500
, f=100MHz
-
-
5.0
dB
Power Gain
Gpe
V
CE
=6V, I
E
=1mA
Rs
=
500
, f=100MHz
(Typ)
18
-
-
dB
Classification
h
FE
R
O
Y
40 - 80
70 - 140
120 - 240
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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