參數(shù)資料
型號(hào): CSA916LA
英文描述: TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-237
中文描述: 晶體管|晶體管|進(jìn)步黨| 160V五(巴西)總裁| 50mA的一(c)|至237
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 41K
代理商: CSA916LA
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSA916
TO-237
BCE
Audio Frequency Amplifier Applications
Complementary CSC1941
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current DC
Collector Current Peak *
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
*PW=10ms, duty cycle=50%
SYMBOL
VCBO
VCEO
VEBO
IC
IC
PT
Tj, Tstg
VALUE
160
160
5.0
50
100
1.0
-55 to +150
UNIT
V
V
V
mA
mA
W
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
ICBO
IEBO
hFE(1) **
hFE(2) **
VBE(on) **
VCE(Sat) ** IC=20mA,IB=2mA
VBE(Sat) ** IC=20mA,IB=2mA
TEST CONDITION
VCB=160V, IE=0
VEB=5V, IC=0
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=10mA,VCE=10V
MIN
-
-
50
90
650
-
-
TYP
-
-
-
-
-
-
-
MAX
100
100
-
400
750
0.60
1.0
UNIT
nA
nA
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
mV
V
V
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
ft
Cob
VCE=10V,IC=10mA,
VCB=10V, IE=0
f=1MHz
50
-
-
-
-
MHz
pF
3.5
hFE (2) CLASSIFICATION
MA : 90-180LA : 135-270 KA : 200-400
** PW=350us, Duty Cycle=2% Pulsed
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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