- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄352822 > CS5159GDR16 Analog IC PDF資料下載
參數(shù)資料
| 型號： | CS5159GDR16 |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 197K |
| 代理商： | CS5159GDR16 |
CS5151H
http://onsemi.com
11
This circuit operates by pulling the Soft Start pin high, and
the VFFB pin low, emulating a short circuit condition.
Figure 14. Implementing Shutdown with the CS5151H
Shutdown
Input
5.0 V
MMUN2111T1 (SOT–23)
5
8
VFFB
SS
IN4148
CS5151H
External Power Good Circuit
An optional Power Good signal can be generated through
the use of four additional external components (see Figure
15). The threshold voltage of the Power Good signal can be
adjusted per the following equation:
VPower Good +
(R1
) R2)
0.65 V
R2
This circuit provides an open collector output that drives
the Power Good output to ground for regulator voltages less
than VPower Good.
Figure 15. Implementing Power Good with the CS5151H
5.0 V
Power Good
10 k
VOUT
PN3904
6.2 k
R1
R2
PN3904
10 k
R3
CS5151H
Figure 16. CS5151H Demonstration Board During
Power Up. Power Good Signal is Activated when
Output Voltage Reaches 1.70 V.
M 2.50 ms
Trace 4– 5.0 V Input (2.0 V/div.)
Trace 3 – 12 V Input (VCC1) and (VCC2) (10 V/div.)
Trace 1– Regulator Output Voltage (1.0 V/div.)
Trace 2– Power Good Signal (2.0 V/div.)
Selecting External Components
The CS5151H can be used with a wide range of external
power components to optimize the cost and performance of
a particular design. The following information can be used
as general guidelines to assist in their selection.
NFET Power Transistors
Both logic level and standard MOSFETs can be used. The
reference designs derive gate drive from the 12 V supply
which is generally available in most computer systems and
use logic level MOSFETs. A charge pump may be easily
implemented to permit use of standard MOSFETs or support
5.0 V or 12 V only systems (maximum of 20 V). Multiple
MOSFETs may be paralleled to reduce losses and improve
efficiency and thermal management.
Voltage applied to the MOSFET gates depends on the
application circuit used. The gate driver output is specified
to drive to within 1.5 V of ground when in the low state and
to within 2.0 V of its bias supply when in the high state. In
practice, the MOSFET gate will be driven rail to rail due to
overshoot caused by the capacitive load it presents to the
controller IC. For the typical application where VCC1 =
VCC2 = 12 V and 5.0 V is used as the source for the regulator
output current, the following gate drive is provided;
VGATE + 12 V * 5.0 V + 7.0 V
(see Figure 17.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CS7311-4 | Optoelectronic |
| CS7311H4H | Optoelectronic |
| CS7321-4 | Optoelectronic |
| CS7331-4 | Optoelectronic |
| CS7341-4 | Optoelectronic |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CS-516003 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog Attenuator |
| CS5160GD | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CS5160GD16 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CS5160GDR16 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CS5161GD16 | 制造商:ON Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。