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參數(shù)資料
| 型號： | CS220-8N |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS |
| 中文描述： | 8 A, 800 V, SCR, TO-220AB |
| 封裝： | PLASTIC, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | CS220-8N |
CS220-8B
CS220-8D
CS220-8M
CS220-8N
SILICON CONTROLLED RECTIFIER
8.0 AMP, 200 THRU 800 VOLTS
TO-220 CASE
Central
Semiconductor Corp.
TM
R3 (24-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-8B
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
CS220
-8B
CS220
-8D
CS220
-8M
CS220
-8N
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
200
400
600
800
V
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=10ms)
I
2
t Value for Fusing (t=10ms)
8.0
A
60
A
18
A
2
s
Peak Gate Power (tp=10μs)
PGM
PG (AV)
IFGM
VFGM
VRGM
di/dt
40
W
Average Gate Power Dissipation
1.0
W
Peak Forward Gate Current (tp=10μs)
4.0
A
Peak Forward Gate Voltage (tp=10μs)
16
V
Peak Reverse Gate Voltage (tp=10μs)
5.0
V
Critical Rate of Rise of On-State Current
50
A/μs
Storage Temperature
Tstg
TJ
Θ
JA
Θ
JC
-40 to +150
°C
Junction Temperature
-40 to +125
°C
Thermal Resistance
60
°C/W
Thermal Resistance
2.5
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10
IT=100mA
VD=12V, RL=10
ITM=16A, tp=380μs
VD=
2
/
3
VDRM, TC=125°C
10
μA
2.0
mA
3.0
15
mA
7.3
20
mA
0.9
1.5
V
1.3
1.8
V
200
V/μs
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