參數(shù)資料
型號： CR3EM
廠商： Mitsubishi Electric Corporation
英文描述： LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
中文描述： 低功率的用途非絕緣型，玻璃鈍化型
文件頁數(shù)： 1/5頁
文件大小： 65K
代理商： CR3EM
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3EM
APPLICATION
Automatic strobe flasher
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
Unit
V
V
V
V
V
8
400
500
320
400
600
I
T (AV)
........................................................................0.6A
V
DRM
.......................................................................400V
I
GT
..........................................................................30mA
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
a
=43
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
Ratings
0.94
0.6
70
20
2.0
0.2
6
6
1
–40 ~ +125
–40 ~ +125
1.1
MAXIMUM RATINGS
TYPE NAME
VOLTAGE
CLASS
2 3
1
1
8
1.2±0.1
4
1
0.8
0.8
2.5 2.5
1.5 MIN
10 MAX
4
1
0.5
OUTLINE DRAWING
Dimensions
in mm
TO-202
2
1
3
1
2
3
CATHODE
ANODE
GATE
相關(guān)PDF資料
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參數(shù)描述
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