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參數(shù)資料
| 型號： | CR12BM |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
| 中文描述： | 中功率使用非絕緣型，玻璃鈍化型 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 66K |
| 代理商： | CR12BM |
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
APPLICATION
Automatic strobe flasher
I
T (AV)
.........................................................................12A
V
DRM
..............................................................400V/600V
I
GT
..........................................................................30mA
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
c
=91
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
Ratings
18.8
12.0
360
544
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
1.5
10.5 MIN
OUTLINE DRAWING
Dimensions
in mm
TO-220C
1
4
1.3
TYPE
NAME
VOLTAGE
CLASS
3
1
2
0.5
2.6
2.5 2.5
0.8
1
3
10.5
4
1
Measurement
point of case
temperature
1
2
3
4
CATHODE
ANODE
GATE
ANODE
8
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