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參數(shù)資料
| 型號(hào)： | CR1100SA |
| 廠商： | Littelfuse, Inc. |
| 英文描述： | The CR range of protectors are based on the proven technology of the T10 thyristor product |
| 中文描述： | 公約與保護(hù)的范圍是基于晶閘管的T10產(chǎn)品成熟的技術(shù) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 98K |
| 代理商： | CR1100SA |
52
www.littelfuse.com
CRxxxx series
Description
The CR range of protectors are based on the proven
technology of the T10 thyristor product. Designed for
transient voltage protection of telecommunications
equipment, it provides higher power handling than a
conventional avalanche diode (TVS) and when compared to
a GDT offers lower voltage clamping levels and infinite surge
life.
Packaged in a transfer molded DO-214AA surface mount
outline designed for high speed pick & place machines used
in today’s surface mount assembly lines.
Electrical Charecteristics
The electrical characteristics of a CRXXXX device is similar
to that of a self gated Triac, but the CR is a two terminal
device with no gate. The gate function is achieved by an
internal current controlled mechanism.
Like the T.T.S. diodes, the CRXXXX has a standoff voltage
(Vrm) which should be equal to or greater than the operating
voltage of the system to be protected. At this voltage (Vrm)
the current consumption of the CRXXXX is negligible and will
not effect the protected system.
When a transient occurs, the voltage across the CRXXXX
will increase until the breakdown voltage (Vbr) is reached. At
this point the device will operate in a similar way to a T.V.S.
device and is in an avalanche mode.
The voltage of the transient will now be limited and will only
increase by a few volts as the device diverts more current.
As this transient current rises, a level of current through the
device is reached (Ibo) which causes the device to switch to
a fully conductive state such that the voltage across the
device is now only a few volts (Vt). The voltage at which the
device switches from the avalanche mode to the fully
conductive state (Vt) is known as the Breakover Voltage
(Vbo). When the device is in the Vt state, high currents can
be deverted without damage to the CRXXXX due to the low
voltage across the device, since the limiting factor in such
devices is dissipated power (V x I).
Resetting of the device to the non conducting state is
controlled by the current flowing through the device. When
the current falls below a certain value, known as the Holding
Current (Ih), the device resets automatically.
As with the avalanche T.V.S. device, if the CRXXXX is
subjected to a surge current which is beyond its maximum
rating, then the device will fail in short circuit mode, this
ensures that the equipment is ultimately protected.
Selecting A CRXXXX
1. When selecting a CRXXXX device, it is important that the
Vrm of the device is equal to or greater than the operating
voltage of the system.
2.The minimum Holding Current (Ih) must be greater than
the current the system is capable of delivering otherwise the
device will remain conducting following a transient condition.
V
BR
MIN
V
RM
V
BO
I
RM
I
BO
I
VT
H
I
T
V-I Graph
Illustrating Symbols
and Terms for
the CR Surge
Protection Device.
The CRXXXX Range Can Be Used to Protect Against Surges As Defined In The Following International Standards.
SA
50A
100A
37A
-
1KV
-
-
-
-
1.0KV
25A
-
-
1000V
25A
SB
100A
150A
75A
-
1KV
1.5KV
38A
2KV
50A
1.0KV
25A
100A
300V
10000V
25A
SC
100A
200A
100A
500A
1KV
1.5KV
38A
4.0KV
100A
4.0KV
100A
250A
500V
4000V
100A
FCC Rules Part 68/D
Metallic
Longitudinal
TR-NWT-001089
10/560μs
10/160μs
10/1000μs
2/10μs
100v/μs
100/700μs
5/310μs
10/700μs
5/310μs
0.5/700μs
0.8/310μs
8/20μs
1-2/50μs
10/700μs
5/310μs
Bellcore Specification
ITU K-17 (Formerly CCITT)
Voltage Wave Form
Current Wave Form
Voltage Wave Form
Current Wave Form
Voltage Wave From
Current Wave Form
(Discharge through 2
impendance) I
Voltage Wave Form
Voltage Wave Form
Current Wave Form
VDE 0433
C-NET 131-24
IEC 1000-4-5
ITU K-20
(Formerly CCITT)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CR1100SB | The CR range of protectors are based on the proven technology of the T10 thyristor product |
| CR1100SC | The CR range of protectors are based on the proven technology of the T10 thyristor product |
| CR1800SA | The CR range of protectors are based on the proven technology of the T10 thyristor product |
| CR1800SB | The CR range of protectors are based on the proven technology of the T10 thyristor product |
| CR1800SC | The CR range of protectors are based on the proven technology of the T10 thyristor product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CR1100SB | 功能描述:硅對(duì)稱二端開關(guān)元件 D0 214 130V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| CR1100SC | 功能描述:硅對(duì)稱二端開關(guān)元件 D0 214 130V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| CR1102H | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:SCHEMATIC, PC LAYOUT, & DIMENSIONS |
| CR1102H11.0 | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:SCHEMATIC, PC LAYOUT, & DIMENSIONS |
| CR1102H11.5 | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:SCHEMATIC, PC LAYOUT, & DIMENSIONS |
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