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參數(shù)資料
| 型號(hào)： | CQY37N |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 950nm 2-Pin T-3/4 Bulk |
| 中文描述： | Infrared Emitters GaAs IR EMIT DIODE |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 273K |
| 代理商： | CQY37N |
Document Number: 81002
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.7, 08-Mar-11
3
CQY37N
Infrared Emitting Diode, 950 nm,
GaAs
Vishay Semiconductors
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
94 7920
103
101
102
104
100
0.1
1
10
100
IF – Forward Current (mA)
I
–
Radiant
Intensity
(mW/sr)
e
0.1
1
10
100
110
100
1000
13718
IF - Forward Current (mA)
-Radiant
Power
(mW)
e
Φ
- 10
10
50
0
100
0
0.4
0.8
1.2
1.6
I e
rel
;
140
94 7993
IF = 20 mA
Φ
e
rel
Tamb - Ambient Temperature (°C)
900
950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φ
e
rel
-
Relative
Radiant
Power
I
F = 100 mA
0.4
0.2
0
0.2
0.4
I
–
Relative
Radiant
Intensity
e
rel
0.6
94 7922
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CQY37N | 制造商:Vishay Intertechnologies 功能描述:IR EMITTER 1.8MM 950NM |
| CQY37N_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs Infrared Emitting Diode in Miniature (T-4/3) Package |
| CQY37N_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| CQY37N_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, 950 nm, GaAs |
| CQY80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT |
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