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參數(shù)資料
| 型號： | CPV364MU |
| 廠商： | International Rectifier |
| 英文描述： | IGBT SIP MODULE Ultra-Fast IGBT |
| 中文描述： | IGBT的高級督察模塊超快速IGBT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 80K |
| 代理商： | CPV364MU |
CPV364MM
Short Circuit Rated Fast IGBT
IGBT SIP MODULE
Features
Short Circuit Rated - 10μs @ 125°C, V
GE
= 15V
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for medium operating frequency (1 to
10kHz)
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
—
—
0.1
20 (0.7)
Max.
2.0
3.0
—
—
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
CS
(MODULE)
Wt
°C/W
g (oz)
Thermal Resistance
TM
soft ultrafast diodes
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
13 A
RMS
per phase (4.1 kW total) with T
C
= 90°C, T
J
= 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%
Description
3
6
7
13
19
18
15
10
16
4
9
12
D1
D3
D5
D2
D4
D6
Q1
Q2
Q3
Q4
Q5
Q6
1
Preliminary Data Sheet PD - 5.035
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
V
CES
Collector-to-Emitter Voltage
I
C
@ T
C
= 25°C
Continuous Collector Current, each IGBT
I
C
@ T
C
= 100°C
Continuous Collector Current, each IGBT
I
CM
Pulsed Collector Current
I
LM
Clamped Inductive Load Current
I
F
@ T
C
= 100°C
Diode Continuous Forward Current
I
FM
Diode Maximum Forward Current
t
sc
Short Circuit Withstand Time
V
GE
Gate-to-Emitter Voltage
V
ISOL
Isolation Voltage, any terminal to case, 1 minute
P
D
@ T
C
= 25°C
Maximum Power Dissipation, each IGBT
P
D
@ T
C
= 100°C
Maximum Power Dissipation, each IGBT
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
22
12
44
44
9.3
44
10
± 20
2500
62.5
25
Units
V
A
μs
V
V
RMS
W
-40 to +150
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbfin (0.55 - 0.8 Nm)
IMS-2
Revision 2
C-425
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