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參數(shù)資料
| 型號(hào)： | CPV364M4UPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 電源模塊 |
| 英文描述： | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 10 Amp |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 240K |
| 代理商： | CPV364M4UPBF |
CPV364M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
1
Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT SIP Module
(Ultrafast IGBT)
FEATURES
Fully
isolated
printed
circuit
board
mount
package
Switching-loss rating includes all “tail” losses
HEXFRED soft ultrafast diodes
Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve
UL approved file E78996
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules.
These
modules
are
more
efficient
than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
Notes
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
IRMS per phase (3.5 kW total)
with TC = 90 °C
12 ARMS
TJ
125 °C
Supply voltage
360 VDC
Power factor
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 10 A, 25 °C
1.56 V
Package
SIP
Circuit
Three Phase Inverter
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
600
V
Continuous collector current, each IGBT
IC
TC = 25 °C
20
A
TC = 100 °C
10
Pulsed collector current
ICM (1)
60
Clamped inductive load current
ILM (2)
60
Diode continuous forward current
IF
TC = 100 °C
9.3
Diode maximum forward current
IFM
60
Gate to emitter voltage
VGE
± 20
V
Isolation voltage
VISOL
t = 1 min, any terminal to case
2500
VRMS
Maximum power dissipation, each IGBT
PD
TC = 25 °C
63
W
TC = 100 °C
25
Operating junction and storage
temperature range
TJ, TStg
- 40 to + 150
°C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
300
Mounting torque
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf
in
(N
m)
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