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參數(shù)資料
| 型號(hào)： | CPH5902 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 45K |
| 代理商： | CPH5902 |
CPH5902
No.6962-1/5
Features
Composite type with J-FET and NPN transistors
contained in the CPH5 package, improving the
mounting efficiency greatly.
The CPH5902 contains a 2SK2394-equivalent chip
and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6962
CPH5902
Package Dimensions
unit : mm
2196
[CPH5902]
52501 TS IM TA-3247
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Marking : RB
VDSX
VGDS
IG
ID
PD
15
--15
10
50
200
V
V
mA
mA
mW
VCBO
VCEO
VEBO
IC
ICP
IB
PC
55
50
6
150
300
30
200
V
V
V
mA
mA
mA
mW
PT
Tj
Tstg
300
150
mW
°
C
°
C
--55 to +150
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
1
0
0
2
0
2.9
0.05
0.4
0.95
0
0
0
0.15
0.4
1
2
3
4
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH5902_12 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifi er Applications |
| CPH5902G-TL-E | 功能描述:JFET NCH J-FET+BIP NPN TR RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| CPH5902H-TL-E | 功能描述:JFET NCH J-FET+BIP NPN TR RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| CPH5903K-F-TL-E | 制造商:ON Semiconductor 功能描述: |
| CPH5905 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications |
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