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參數(shù)資料
| 型號(hào)： | CPH5857 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：P溝道MOSFET的硅SBD智能交通：肖特基二極管通用開(kāi)關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | CPH5857 |
CPH5857
No. A0547-1/6
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0547
CPH5857
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Features
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Junction temperature 150
°
C guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : YK
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
--20
±
10
--1.5
--6.0
0.9
150
V
V
A
A
W
°
C
°
C
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
--55 to +150
VRRM
VRSM
IO
IFSM
Tj
Tstg
15
15
1
3
V
V
A
A
°
C
°
C
50Hz sine wave, 1 cycle
--55 to +150
--55 to +150
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
D2006PE TI IM TC-00000405
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