- 您現(xiàn)在的位置：買賣IC網 > PDF目錄378893 > CPH5826 (Sanyo Electric Co.,Ltd.) MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device PDF資料下載
參數(shù)資料
| 型號： | CPH5826 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：N溝道MOSFET的硅SBD智能交通：肖特基二極管通用開關設備 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 60K |
| 代理商： | CPH5826 |
CPH5826
No.7786-1/5
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7786
CPH5826
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter applications.
Composite type with a N-channel sillicon MOSFET (MCH3406) and a schottky barrier diode (SB07-03C)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Low reverse current.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : XC
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
20
±
10
V
V
A
A
W
°
C
°
C
3
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (600mm
2
0.8mm) 1unit
12
0.9
150
--55 to +125
VRRM
VRSM
IO
IFSM
Tj
Tstg
30
35
700
V
V
mA
A
°
C
°
C
50Hz sine wave, 1 cycle
5
--55 to +125
--55 to +125
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62504 TS IM TA-100747
相關PDF資料 |
PDF描述 |
|---|---|
| CPH5831 | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| CPH5838 | General-Purpose Switching Device Applications |
| CPH5852 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| CPH5854 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5855 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CPH5831 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| CPH5831-TL-E | 制造商:SANYO 功能描述:Nch+SBD 20V 3A CPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SOT346 制造商:Sanyo 功能描述:0 |
| CPH5835 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5835_07 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5838 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復。